Shin-Etsu Chemical to Develop a QSTTM Substrate for 300-mm GaN

Contributed by: Business Wire

Logo

Tags

Semiconductor

Chemicals/Plastics

Technology

Manufacturing

Other Manufacturing

Hardware

Shin-Etsu Chemical Co., Ltd.

More Like This

Two-layer sample processed by Shin-Etsu dual damascene method (Cross-section view) (Photo: Business Wire)

Shin-Etsu Chemical: Developing Equipment to Manufacture Semiconductor Package Substrates for the Back End Process and Pursuing a New Manufacturing Method

Right: Phase 1 of the new fabrication facility, foreground: the new office building (Photo: Business Wire)

Toshiba Completes New 300-Millimeter Wafer Fabrication Facility for Power Semiconductors

PR Newswire associated0

E&R Engineering Corp. Forms E-Core System Alliance: Leading Glass Substrate into the Mass Production Era

PR Newswire associated0

Through Glass Via (TGV): The Next Generation Advanced Packaging Solution

Shin-Etsu Chemical Develops Industry-First Heat-Shrinkable Silicone Rubber Tubing for Busbar Covering

Infineon pioneers world's first 300 mm power gallium nitride (GaN) technology - an industry game-changer

PR Newswire associated0

E&R to Showcase Glass Substrates and Advanced Technologies at SEMICON Taiwan 2024

Shin-Etsu Chemical develops the industry's first water-based, fast-curing silicone resin that does not use emulsifiers